PENGARUH SUHU ANNEALING TERHADAP ENERGI GAP FILM TIPIS BARIUM ZIRKONIUM TITANAT
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Date
2020-09
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Abstract
A thin layer of Barium Zirconium Titanate (BaZrxTi1-xO3) was deposited on the glass substrate
using the sol-gel method with annealing temperatures of 6000C and 6500C. The thin layer was
characterized using ultraviolet-visible spectroscopy to determine the absorbance, transmittance, and
energy bandgap values. The energy bandgap value of the BaZr0.8Ti0.2O3 thin layer at a temperature
of 6000C and 6500C were 3.76 and 3.69 eV, respectively. The energy bandgap value obtained shows
that the BaZr0,8Ti0,2O3 thin layer is a semiconductor material. The width of the energy band gap
decreases with increasing annealing temperature given to the sample with the same composition.