PENGARUH SUHU ANNEALING TERHADAP ENERGI GAP FILM TIPIS BARIUM ZIRKONIUM TITANAT

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dc.contributor.authorRamadhani, Wenny
dc.contributor.supervisorDewi, Rahmi
dc.date.accessioned2021-08-23T04:23:37Z
dc.date.available2021-08-23T04:23:37Z
dc.date.issued2020-09
dc.description.abstractA thin layer of Barium Zirconium Titanate (BaZrxTi1-xO3) was deposited on the glass substrate using the sol-gel method with annealing temperatures of 6000C and 6500C. The thin layer was characterized using ultraviolet-visible spectroscopy to determine the absorbance, transmittance, and energy bandgap values. The energy bandgap value of the BaZr0.8Ti0.2O3 thin layer at a temperature of 6000C and 6500C were 3.76 and 3.69 eV, respectively. The energy bandgap value obtained shows that the BaZr0,8Ti0,2O3 thin layer is a semiconductor material. The width of the energy band gap decreases with increasing annealing temperature given to the sample with the same composition.en_US
dc.description.sponsorshipJURUSAN FISIKA FAKULTAS MATEMATIKA DAN ILMU PENGETAHUAN ALAMen_US
dc.identifier.otherwahyu sari yeni
dc.identifier.urihttps://repository.unri.ac.id/handle/123456789/10092
dc.language.isoenen_US
dc.titlePENGARUH SUHU ANNEALING TERHADAP ENERGI GAP FILM TIPIS BARIUM ZIRKONIUM TITANATen_US
dc.typeArticleen_US

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